收藏本站

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP52N055SUG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
ORDERING INFORMATION
The NP52N055SUG is N-channel MOS Field Effect
Transistor designed for high current switching applications.
FEATURES
? Channel temperature 175 degree rating
? Super low on-state resistance
R DS(on) = 14 m ? MAX. (V GS = 10 V, I D = 26 A)
? Low C iss : C iss = 2100 pF TYP.
ABSOLUTE MAXIMUM RATINGS (T A = 25°C)
PART NUMBER
NP52N055SUG
PACKAGE
TO-252 (MP-3ZK)
(TO-252)
Drain to Source Voltage (V GS = 0 V)
Gate to Source Voltage (V DS = 0 V)
Drain Current (DC) (T C = 25 ° C)
V DSS
V GSS
I D(DC)
55
±20
±52
V
V
A
Drain Current (pulse)
Note1
I D(pulse)
±170
A
Total Power Dissipation (T C = 25 ° C)
Total Power Dissipation (T A = 25 ° C)
Channel Temperature
Storage Temperature
P T1
P T2
T ch
T stg
56
1.2
175
? 55 to +175
W
W
° C
° C
Repetitive Avalanche Current
Repetitive Avalanche Energy
Note2
Note2
I AR
E AR
21
44
A
mJ
Notes 1. PW ≤ 10 μ s, Duty Cycle ≤ 1%
2. T ch ≤ 150 ° C, V DD = 28 V, R G = 25 ? , V GS = 20 → 0 V
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
R th(ch-C)
R th(ch-A)
2.68
125
° C/W
° C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16865EJ2V0DS00 (2nd edition)
Date Published January 2005 NS CP(K)
The mark
shows major revised points.
Printed in Japan
2004
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
NP52N06SLG-E1-AY MOSFET N-CH 60V 52A T0-252
NP55N03SUG-E1-AY MOSFET N-CH 30V 55A TO-252
NP55N055SDG-E1-AY MOSFET N-CH 55V 55A TO-252
NP55N055SUG-E1-AY MOSFET N-CH 55V 55A TO-252
NP60N03KUG-E1-AY MOSFET N-CH 30V 60A TO-263
NP60N03SUG-E1-AY MOSFET N-CH 30V 60A TO-252
NP60N04KUG-E1-AY MOSFET N-CH 40V 60A TO-263
NP60N04MUG-S18-AY MOSFET N-CH 40V 60A TO-220
相关代理商/技术参数
NP52N055SUG-E1-AZ 制造商:Renesas Electronics Corporation 功能描述:NP52N055SUG Series N-Channel 55 V 14 mOhm 38 nC Switching MosFet - TO-252 制造商:Renesas Electronics Corporation 功能描述:Transistor,FET,Nch,55V/52A
NP52N06SLG-AY 制造商:Renesas Electronics Corporation 功能描述:
NP52N06SLG-E1-AY 功能描述:MOSFET N-CH 60V 52A T0-252 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
NP5400BA1C 制造商:MMC 功能描述:
NP5400-BA1C 制造商:AppliedMicro 功能描述:
NP550 制造商:Energizer Battery Company 功能描述:BATTERY CAMCORDER SONY NP330 LI-ION 制造商:Energizer Battery Company 功能描述:BATTERY, CAMCORDER, SONY NP330, LI-ION
NP55-12(22NF) 制造商:Yuasa Battery Inc 功能描述:
NP55-12B 制造商:EnerSys 功能描述:LEAD ACID BATTERY, 12V, 56AH; Battery Size Code:-; Battery Capacity:56Ah; Battery Voltage:12V; Battery Technology:Lead Acid; External Height:228mm; External Width:138mm; External Depth:229mm; Weight:18.7kg; Battery Terminals:Bolt ;RoHS Compliant: NA